Quantum transport simulations of a monolayer all-inorganic perovskite transistor

Abstract

Recently, two-dimensional all-inorganic perovskite CsPbI3 has become a promising candidate for photodetectors, because of its low-cost, high thermal stability, and long diffusion lengths. To study the carrier transport behavior, we simulated transistors based on the monolayer form of CsPbI3 in the sub-10 nm regime by using ab initio quantum transport approaches. The sub-10 nm monolayer (ML) perovskite transistors show subthreshold swing down to 96 mV dec−1 and on-state current up to 1869 μA μm−1. The on-current of the ML perovskite transistor is even seven times of that of the ML MoS2 transistor with the same gate length of 9 nm, mainly due to the small effective mass of electrons in ML Cs2PbI4. Compared with the latest industrial standard (International Technology Roadmap for Semiconductors), the sub-10 nm ML perovskite transistors show 0.08–0.29 fJ μm−1 less power-delay product. Such small power-delay products might also originate from the small electrons’ effective mass and indicate the high potential of sub-10 nm ML perovskite transistors for the low-standby-power applications.