Abstract
A series of high quality δ-doped In 0.53Ga 0.47As samples have been grown lattice matched to InP with design doping densities in the range 2 × 10 12 to 5 × 10 12 cm −2. Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.
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