Quantum transport in nano MOSFETs

Abstract

In this work, a general method for describing quantum electron transport will be introduced. These formulations are based on Schrödinger equation, Pauli master equation, density matrix, Wigner function and the Green function. Here, we describe the microscopic quantum theory of electron transport in silicon devices based on the NEGF formalism. We review the NEGF formalism and derive its key equations. We include the electron–phonon interactions and other scattering mechanisms such as the impurity scattering and the surface roughness scattering. For the electron–electron interactions, we used the assumption that each electron moves independently and sees only the average field generated by all the other electrons.