Abstract
Owing to their advantages of wide direct-band gap, excellent physical and chemical stability, high saturated electron drift velocity, and high dielectric breakdown field, Ⅲ-nitride semiconductor materials are the most favorite materials in developing high-frequency, high-temperature and high-power electronic devices and optical devices. Owing to their advantages of long spin relaxation time and high Curie temperature, Ⅲ-nitride semiconductor materials are the most favorite materials in developing spintronic devices. The magnetotransport methods at low temperatures and the circular photogalvanic effect at room temperature are introduced. The research status of the quantum transport and spin properties of the carriers in GaN-based heterostructures is reviewed.
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