Abstract
InQuantum structure this chapter and the following Chap. 9 we deal with semiconductor quantum structures. First, two–dimensional electron gas (2DEG) in MOSFET and single heterostructure (High Electron Mobility Transistor: HEMT) are discussed by solving Schrödinger equation, and then transport properties are described by evaluating scattering rate and mobility. Mesoscopic phenomena observed in a semiconductor structure of the scale in between micro– and macro–structure is discussed by Landauer and Landauer Büttiker formulas. Aharonov–Bohm effect and ballistic transport are also discussed. Quantum Hall effect has attracted many scientists from the reasons due to the development in new physics of semiconductors in addition to the resistance standard, von Klitzing constant. Integral and fractional quantum Hall effects are discussed in different models. In Chap. 9 we deal with superlattices and quantum dots.
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