Quantum-Sized Objects in the Form of Exciton and Trion Traps: Their Role in Excitonic Partial Blocking of the Memristor Properties of Thin Zinc Oxide Films

Abstract

Possible mechanisms of the emergence of exciton and trion traps at room temperature and the dynamics of relaxation processes occurring in them are discussed, based on an analysis of the results from experiments on photon echoes in thin films of zinc oxide and doped silicon. The current–voltage characteristics recorded for such films with traps displaying the memristor effect are studied, and the influence traps exert on the parameters of such characteristics is established.