Abstract
ABSTRACTWe examine the effects of finite crystallite size on the energies of optical transitions originating from states located at two different critical points of the semiconductor Brillouin zone. Using a versatile, dual source, R.F. sputtering technique, CdTe-glass composite thin films have been produced possessing average crystal sizes ranging from 24 to 125 Å in films containing up to 30 vol% semiconductor. Analysis of quantum-size induced transition energy shifts, monitored by optical absorption, indicates the persistence of significant Coulomb interactions between carriers at the gamma point of CdTe in crystallite sizes 0.3 times the size of the bulk exciton. L-point transition energy shifts support the existence of 2-D bound electron-hole pair states whose center-of-mass motion is confined in the semiconductor crystals.
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