Abstract
We report the clear observation of the quantum size effect in an Fe quantum well (QW) detected by resonant tunneling carriers injected from a p-type Ge semiconductor electrode in fully epitaxial double-barrier magnetic tunnel junctions, which are composed of Co/Fe/MgO/Fe QW/MgO/Ge:B grown on a p+-Ge(001) substrate. A large tunnel magnetoresistance (TMR) ratio up to 137% (237%), which is comparable to that in Fe/MgO/Fe, is obtained at 297 K (3.5 K). The quantum oscillations are clearly observed in the dI/dV–V and d2I/dV2–V curves of our devices, and the resonance voltages are in good agreement with the resonant levels calculated by the phase accumulation model. Following these oscillations, the TMR is modulated by the quantum size effect. Our results are promising for realizing future quantum spintronics devices based on semiconductor/metal hybrid heterostructures with advanced functionalities.
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