Quantum resonant tunneling in semiconductor double-barrier structure

Abstract

Using Schrodinger equation, we have theoretically studied the quantum transport in double-barrier potential resonant tunneling diodes. To obtain higher peak in transmission coefficient in twofold barrier quantum well system require to reducing the barrier height and increasing the width of the quantum well which causes the electrons to turn unbounded. In addition, the potential energies should be below the height of the barrier. This occurs because on resonance with unity transmission requires exact cancellation in amplitude and phase of a coherent superposition of all contributions to the back-scattered particle-waves. At a certain height, width and potential energy, the resonances sit-down between barriers giving rise to peaks in transmission. Our model can be extended for several barriers to increasing the resonance peaks of transmission.