Quantum-Ready Germanium and Silicon

Abstract

The semiconductor industry knows how to make and integrate billions of excellent transistors. What materials do we need to integrate excellent qubits at large scale for the quantum information age of tomorrow? What are the properties that we search in these materials to make them quantum-ready? I will focus on isotopically-engineered, strained silicon-germanium heterostructures enabling high-performance hole spin-qubits in germanium and electron spin qubits in silicon. In particular, I will make a case for the germanium quantum information route [1]. Germanium is emerging as a versatile material to realize devices capable of encoding, processing and transmitting quantum information. I will examine the materials science progress underpinning germanium-based planar heterostructures, review our most significant experimental results demonstrating key building blocks for quantum technology, and identify the most promising avenues toward scalable quantum information processing in germanium-based systems.[1] G. Scappucci et al, The germanium quantum information route, Nat Rev Mater (2020). https://doi.org/10.1038/s41578-020-00262-z Figure 1