Abstract
The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg 1−xCd xTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. Hydrostatic pressure up to 10 3 MPa is used to characterize the properties of the two-dimensional electron gas in the inversion layer. At atmospheric pressure three series of quantum oscillations are revealled, indicating that tthree electric subbands are occupied. From quantum oscilations of the magnetoresistivity ▪ the characteristics parameters of the electric subbands (subband populations n si, subband energies E F−E i, effective electron masses m ∗ ci) and their pressure dependences are established. A strong decrease of the carrier concentration in the inversion layer and of the corresponding subband population is observed when pressure is applied A simple theoretical model based on the triangular-well approximation and taking into account the pressure dependence of the energy band structure of Hg 1−xCd xTe is use to calculate the energy band diagram of the quantum well and the pressure dependence of the subband parameters.
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