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Abstract
Four types of quantum point contacts (QPC) have been fabricated and their conductance vs gate voltage investigated at various temperatures and biases. Conventional high electron mobility transistor (HEMT) structures and inverted HEMT (I-HEMT) structures were used as starting material. The QPC constriction was formed by a shallow wet-etch and devices with constriction widths between 50 and 400 nm were investigated. On both types of heterostructures, two types of devices were fabricated. In the first type of device, an Al gate electrode was deposited directly on top of the etched constriction. The second type of device was made with a buried constriction by MBE regrowth of AlGaAs on top of the shallow etched sample and finally gate metalisation. For all four types of devices, conductance quantization was observed up to temperatures between 20 and 30 K. Separations between the first and second 1D subbands were found to be up to 20 meV for Al gated devices and up to 10 meV for the regrown devices.
Published Version
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