Quantum percolation tunneling current 1/f γ noise model for high-κ gate stacks Bi-layer breakdown

Abstract

Based on the elastic trap-assisted tunneling mechanism in high-κ gate stacks, a quantum percolation tunneling current 1/fγ noise model is proposed by incorporating quantum tunneling theory into the quantum percolation model. We conclude that the noise amplitude of the PSD (Power Spectral Density) for three stages, namely the fresh device, one-layer BD (breakdown), and two-layer BD, increases from 10−22→10−14→10−8 A2/Hz. Meanwhile, the noise exponent γ for the three stages, has the 1/f2 type (γ→2), 1/fγ type(γ→1∼2), and 1/f type (γ→1), respectively. The simulation results are in good agreement with the experimental results. This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence. These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization methods.