Abstract
Theory of quantum corrections to conductivity of granular metal films is developed for the realistic case of large randomly distributed tunnel conductances. Quantum fluctuations of intergrain voltages (at energies E much below the bare charging energy scale E(C)) suppress the mean conductance g (E) much more strongly than its standard deviation sigma(E). At sufficiently low energies E(*) any distribution becomes broad, with sigma(E(*)) approximately g (E(*)), leading to strong local fluctuations of the tunneling density of states. The percolative nature of the metal-insulator transition is established by a combination of analytic and numerical analysis of the matrix renormalization group equations.
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