Abstract
The influence of uniaxial deformation on the transport properties of bismuth wires is studied in a wide range of temperatures. Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations in the strain dependence of the resistance for uniaxial strain at T=4.2K. The amplitude of oscillations is significant (38%) at helium temperature and becomes smeared at T=77K. The oscillations observed are due to the quantum size effect. By evaluating the period of oscillations we are able to identify the groups of carriers involved in transport. The computed periods of 42.2 and 25.9nm are approximatively in the ratio 2:1 for two experimentally observed sets of oscillations from light and heavy electrons.
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