Quantum noise in various diodes at low temperature

Abstract

Tucker's wave-mechanical analysis of the conductance and the noise spectrum S I( f) of tunnel junctions is applied to metal-oxide-metal diodes and p-n junction tunnel diodes; the Schottky barrier diode is also discussed. The quantum correction factor is defined as the ratio P av( f)/ P av(0), where P av( f) is the available noise power per unit bandwidth. The shot noise quantum correction factor is defined as S I( f)/ S I(0). At zero bias and high frequencies the results suggest a thermal noise approach, which can be modified into a shot noise approach for the Schottky barrier diode. At sufficient forward bias shot noise prevails, with a quantum correction factor depending on the curvature of the characteristic as Tucker showed. At low frequencies and non-zero bias earlier noise expressions are obtained.