Abstract
We propose a novel MOSFET design that embodies single-wall zigzag semiconducting carbon nanotubes (CNTs) in the channel. Investigations show that CNTs have high low-field mobilities, which can be as great as 1 /spl times/ 10/sup 5/ cm/sup 2//V/spl middot/s. Thus, we expect that MOSFET performance can be improved by embedding CNTs in the channel. To investigate the performance of a newly proposed CNT-MOSFET device, we develop a methodology that connects CNT modeling to MOSFET simulations. Our calculations indicate that by forming high mobility regions in the channel, MOSFET performance can be boosted. However, barriers formed between the CNT and silicon due to the variations of the bandgaps and electron affinities can degrade MOSFET performance improvements. Our calculations were obtained by building on our existing CNT Monte Carlo simulator , and quantum-based device solver ,.
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