Abstract
Magnetoresistance (MR), Hall resistance and magnetization of the Pb0.83Sn0.17Se crystals have been measured in magnetic field up to 15 T and 5 T, respectively, and temperatures from 1.7 K up to 300 K. A large linear and temperature dependent MR is observed in magnetic field up to 15 T. The de Haas–van Alphen (dHvA) and Shubnikov de Haas effects (SdH) of Pb0.83Sn0.17Se crystals have been clearly seen in the temperature range from 30 K down to 1.7 K and magnetic field as low as 2 T. The dHvA and SdH oscillations reveal single frequency of around 8 T which confirms the existence of a single Fermi surface cross section. Influence of isothermal annealing of Pb0.83Sn0.17Se crystals in Se vapours has been investigated. By increasing the annealing temperature from 433 °C up to 440 °C, transition from n to p-type conductivity has been observed. The dHvA and SdH effects clearly reflect the existence of a nontrivial Berry’s phase owing to the linear band dispersion which is the signature of a three-dimensional Dirac fermion in the Pb0.83Sn0.17Se crystals [1].
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