Quantum-limit behavior of magneto-tunneling in an AlGaAs/GaAs/AlGaAs double-barrier structure under high magnetic fields up to 40 T

Abstract

By applying pulsed high magnetic fields up to 40 T, we studied magneto-tunneling properties in AlGaAs/GaAs/AlGaAs double-barrier resonant-tunneling devices in a quantum-limit regime. A distinct resonance of tunneling current and a hysteresis of current vs voltage curves which originate from the discreteness of the density of states and the effect of charge build-up were observed. A self-consistent model of charge build-up in the well layer considering both the 0- and 1-dimensional emitter states was developed, which explained the mechanism of these observations well. It has been shown that the tunneling from the 0- and 1-dimensional emitter states to the 0-dimensional well state determines the magneto-tunneling current and that the Fermi energy oscillation in the quantum-limit regime is consistently understood by the energy configuration of these Landau levels.