Abstract
Electronic transport in n- and p-type modulation-doped Ga0.7In0.3N0.015As0.985/GaAs quantum wells are investigated using magneto-transport measurements in the temperature range between T = 1.8 and 32 K and at magnetic fields up to B = 11 T. The momentum relaxation and the quantum lifetimes (τq ) of electrons and holes are obtained directly from the temperature and magnetic field dependencies of the SdH oscillation amplitudes, respectively. A detailed analysis of quantum and transport life times indicates that the momentum relaxation of holes is forward displaced in k-space, while a large angle-scattering mechanism is prominent for the electrons. This discrepancy is believed to be due to scattering of electrons with nitrogen complexes and to the lack of such a mechanism for holes.
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