Abstract

Quantum interference effects are observed in a GaAs/Al x Ga 1-x As interferometer which consists of double quantum wires and triple Schottky gates. Both wires are straight, stacked in the growth direction, and coupled via a thin barrier. The electron wave function is controlled by tuning the gate voltages in such a way that an interferometer is constructed in the straight wires. A quasiballistic electron transport was confirmed, and oscillations of resistance with variation of the voltage of the central gate are clearly observed at 1.8 K

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