Quantum interference near bismuth-chalcogenide microstructures

Abstract

In this work, we show that the quantum interference between two spontaneous emission channels can be greatly enhanced when a three-level V-type quantum emitter is placed near the bismuth chalcogenide ( B i 2 T e 3 ). Namely, we calculated the degree of quantum interference for quantum emitters placed in the vicinity of a planar surface of a B i 2 T e 3 slab, as well as near a B i 2 T e 3 microsphere. We found, in particular, that the degree of quantum interference assumes very high values, for both geometries, which is a result of the strong dependence of the spontaneous emission rate on the orientation of a quantum-emitter dipole relative to the B i 2 T e 3 surface, at the frequencies of polaritonic-type excitations. These particular high values of quantum interference can trigger a variety of phenomena associated with quantum interference of spontaneous-emission channels, such as lasing without inversion, coherent populations trapping, transparency, nonlinearities, and so forth.