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Abstract
Impact of the discrete dopants on device performance is crucial in determining the behavior of nanoscale semiconductor devices. Atomistic quantum mechanical device simulation for studying the effect of discrete dopants on device's physical quantities is urgent. This work explores the physics of discrete-dopant-induced characteristic fluctuations in 16-nm fin-typed field effect transistor (FinFET) devices. Discrete dopants are statistically positioned in the three-dimensional channel region to examine associated carrier's characteristic, concurrently capturing “dopant concentration variation” and “dopant position fluctuation”. An experimentally validated quantum hydrodynamic device simulation was conducted to investigate the potential profile and threshold voltage fluctuations of the 16-nm FinFET. Results of this study provide further insight into the problem of fluctuation and the mechanism of immunity against fluctuation in 16-nm devices.
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