Abstract
Parabolic well structures have been proposed to produce thick spatially uniform regions of dense high mobility electron gas. Wide parabolic GaAs/Al xGa 1−xAs wells were fabricated using molecular beam epitaxy by grading the average Al concentration. These structures have high mobility at low temperatures (μ = 5 × 10 4 to 2.5 × 10 5 cm 2/V sec) and show the integer and fractional quantum Hall effect. Characteristic changes in the integer quantum Hall effect and the longitudinal magnetoresistance in a 4000 Å wide well are measured as the well is partially filled with electrons using persistent photoconductivity. These data establish that up to three electric subbands of the well are occupied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
