Abstract
For an investigation of the quantum Hall effect on n-In0.85Ga0.18As/In0.82Al0.82As metamorphic nanoheterostructures with high InAs content the longitudinal and Hall magnetoresistances were measured in magnetic fields up to 9T at T=(1.8÷30)K. The results for a temperature dependence of conductivity on the delocalized states at the center of Landau level were analysed within the scaling concept for a plateau-plateau transition in quantum Hall regime.
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