Abstract
For electronic device applications, large-area graphene grown on a metal catalyst by CVD requires a transfer to an insulating substrate. Previously, a transfer method that uses water-soluble polyvinyl alcohol and a laminator was proposed. The method is simple, harmless, and does not require advanced facilities. Based on this method, we fabricated fine patterns on graphene transferred onto a SiO2/Si substrate using lithography and investigated their transport properties. The carrier is controlled between the electrons and holes. The quantum Hall effect is observed at low temperatures. This method can be an option for graphene device production.
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