Quantum Hall effect in an InAs∕AlSb double quantum well

Abstract

Double quantum wells (DQWs) were first implemented in the InAs∕AlSb heterosystem, which is characterized by a large Landé g factor ∣g∣=15 of the InAs layers forming the well, much larger than the bulk g factor ∣g∣=0.4 of the GaAs in conventional GaAs∕AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4eV), features with odd filling factors ν=3,5,7,… are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν=3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν=1 state. The observation of a similar effect for ν=3 in an InAs∕AlSb DQW may be due to the large bulk g factor of InAs.