Abstract
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.
Highlights
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order
Do trilayer graphenes open up an avenue to a new class of materials intermediate between graphite and its fundamental building block of monolayer graphene, but studies of the electronic transport of ABA graphenes may shed light on transport anomalies observed in bulk graphite and other semimetals whose properties cannot be so varied by external gates [10,11]
We study large area dual-gated trilayer graphene samples known to be of ABA stacking and present a unified view of the electronic transport of this system that has not been available to date
Summary
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Measurements of the electronic transport in trilayers have been previously reported [12], and the nature of the stacking has been inferred by comparing the observed signatures of the quantum Hall effect (QHE) to those expected for ABA [13] and ABC [14] graphenes.
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