Abstract
Quantum Hall devices for primary resistance metrology based on the GaAs/Al[Formula: see text]Ga[Formula: see text]As heterostructure were fabricated and compared with the devices from international metrology organization International Bureau of Weights and Measures (BIPM) by calibrating the same 100 [Formula: see text] transfer standard resistor with a cryogenic current comparator. Relative deviation between NIM-made device NIM-C1 and BIPM-made device BIPM-1 was −4.49 parts in 109 with an uncertainty of 3.63 parts in 109 which indicated NIM-C1 satisfied the requirement for the primary resistance standard.
Highlights
IntroductionThe primary resistance standard was quantized by Quantum Hall (QH) effect with in terms of Planck constant h and elementary charge e to replace the physical resistance standard.[1,2] QH standard devices with an accuracy of 10−9 have been realized by GaAs/AlxGa1−xAs heterostructures.[3,4,5] and epitaxial monolayer graphene.[6,7] In NIM, the QH devices for national resistance standard system were previously provided by international metrology organization International Bureau of Weights and Measures (BIPM) based on GaAs/AlxGa1−xAs heterostructures.[8] NIM has begun to fabricate the self-made QH devices both on graphene and GaAs substrate.[9,10,11] to guarantee the stability and independence of the national resistance
In NIM, the Quantum Hall (QH) devices for national resistance standard system were previously provided by international metrology organization International Bureau of Weights and Measures (BIPM) based on GaAs/AlxGa1−xAs heterostructures.[8]
NIM-C1 and BIPM-1 were measured in the primary resistance standard system equipped with an Oxford magnet (14 T), home-made high accuracy current source, EM N11 voltage meter and a cryogenic current comparator (CCC)
Summary
The primary resistance standard was quantized by Quantum Hall (QH) effect with in terms of Planck constant h and elementary charge e to replace the physical resistance standard.[1,2] QH standard devices with an accuracy of 10−9 have been realized by GaAs/AlxGa1−xAs heterostructures.[3,4,5] and epitaxial monolayer graphene.[6,7] In NIM, the QH devices for national resistance standard system were previously provided by international metrology organization International Bureau of Weights and Measures (BIPM) based on GaAs/AlxGa1−xAs heterostructures.[8] NIM has begun to fabricate the self-made QH devices both on graphene and GaAs substrate.[9,10,11] to guarantee the stability and independence of the national resistance This is an Open Access article published by World Scientific Publishing Company. The optical image is shown in the inset of Fig. 2
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