Quantum electron transport modeling in uniaxially strained silicon channel of double‐gate MOSFETs

Abstract

AbstractThis paper reports the calculation of quantum electron transport in double‐gate metal oxide semiconductor field effects transistors (MOSFETs) with uniaxially strained silicon channel. The calculation is formulated based on multiband non‐equilibrium Green's function (NEGF) method coupled self‐consistently with the Poisson equation. The empirical sp3s * tight binding approximation (TBA) model with nearest neighbor coupling is employed to obtain more realistic band structure in the formulation. We compare the carrier transport characteristics of simulated MOSFETs with strained channel to those of without strain. The simulation results show that the presence of uniaxially strain induce the current enhancement in the devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)