Abstract
The external quantum efficiency of tin-doped GaAs diodes in the 10 16 to 5 × 10 18 cm −3 carrier concentration range was investigated. A maximum efficiency of about 0·18 per cent at 100° K was found at 5 × 10 17 cm −3 carriers, when a fixed diode geometry and ZnAs 2 junction diffusion at 870° C was employed. The results from a study of the effect of zinc diffusion conditions on efficiency indicate that a substantial increase in efficiency can be obtained by proper control of the zinc concentration gradient near the p− n junction. With the same fixed diode geometry, a quantum efficiency of 0·65 per cent (300° K) was obtained in tin-doped GaAs with a 1·7 × 10 18 cm −3 carrier concentration by employing a Zn-Ga alloy diffusion procedure to decrease the surface zinc concentration to less than 10 19 cm −3. Capacitance-voltage measurements indicate that this increased efficiency is associated with a linearly graded junction.
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