Abstract
We present different optical data obtained at 300 and 2 K in porous silicon made by electrochemical dissolution. In particular, photoluminescence experiments as a function of porosity are described. It is shown that they can be interpreted using a rather simple model which assumes that porous silicon is constituted by crystalline silicon quantum wires or needles. Additional data obtained from photoluminescence excitation spectroscopy experiments are also presented. There are now different results which are compatible with quantum effects in porous silicon. However, such an interpretation does not seem to be definitely established so that further experiments are certainly required.
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