Abstract
A stochastic process with repulsive correlations is proposed to simulate the nonequilibrium electronic transport through microstructures under finite bias voltage. Since an electron needs to stay a finite time τ0 on a channel state while traversing the constriction structure, electrons following within time τ0 cannot get through the same channel state because of the Pauli exclusion. This quantum effect induces a repulsive correlation and suppresses the shot noise. The Monte Carlo results are compared with experimental measurements.
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Schedule a callMore From: Modern physics letters. B, Condensed matter physics, statistical physics, applied physics
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