Abstract
The pyramid-like Ge islands deposited on Si(001) substrate using molecular beam epitaxy at 300 °C reveal quantum dots (QDs) properties. Measurements of x-ray absorption fine structure at the germanium K edge (GeK XAFS measurements) have been performed using total electron yield and fluorescent detection mode. The influence of effective thickness of the germanium film, Ge nanocluster sizes and Si deposition temperature on the QDs microstructure parameters is revealed. Some information concerning the energy structure of the free states of the quantum dot was extract from x-ray absorption near edge structure (XANES) spectra for the first time.
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