Abstract
Continuous wave room-temperature output power of ∼5W for edge-emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 μm. Lasers emitting at 1140–60 nm useful as pump sources for Tm3+-doped fibers for frequency up-conversion to 490 nm reach output powers close to 12W and show transparency current densities of 6 A/cm2 per dot layer, ηint=98% and αi=1.5 cm−1. Long operation lifetimes and radiation hardness are manifested. Cut-off frequencies of about 10GHz and low α-factors are realized. Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120–140 fs, 4–7 times faster than bulk/QW SOAs. The breakthrough became possible due to development of self-organized growth in QD technology.
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