Abstract
Recent progress toward fabricating and characterizing quantum dots in III–V quantum well structures is reviewed. Quantum dots made by use of lithography and etching, including deep-etched, barrier-modulated, strain-induced and interdiffused quantum dots, are described. Quantum dots fabricated by growth, including natural quantum dots, dots on patterned substrates, and self-assembled dots, are discussed. Dot sizes and uniformity, energy-level splittings, and luminescence efficiencies that are now being achieved are discussed. The status of key issues, such as the energy relaxation in quantum dots, is mentioned.
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