Abstract
In this article, a p-type high- ${k}$ /metal gate (HKMG) FinFET with a special diamond-shaped channel on a bulk Si substrate for the formation of gate-induced quantum dot (QD) is reported. The electrical characteristics of the device at various temperatures and bias voltages for QD formation are extensively investigated. Remarkable oscillations in the drain current are observed for the 30-nm gate length ( ${L}_{g}$ ) transistor at ${T} =20$ K. By analyzing the experimental results as well as the simulation data obtained by TCAD, it is found that the carriers are strongly localized at the small sharp tip of the channel and the thick spacers contribute to a large confinement potential for forming QD with a large charging energy of 30 meV. This provides a promising approach for large-scale QD fabrication and integration using the mainstream bulk complementary metal oxide semiconductor (CMOS) process.
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