Abstract
It is shown that optimisation of the structure of the active channel of quantum-dot InAs/AlGaAs/GaAs superluminescent diodes (SLDs) provides a noticeable increase in their external quantum efficiency. The output cw power coupled out of a single-mode fibre achieves 1.3 and 0.9 W for the emission bandwidth of 27 and 110 nm, respectively. The results of preliminary lifetime tests predict the high enough reliability of these SLDs.
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