Abstract
Quantum dot lasers, amplifiers, modulators and photodetectors epitaxially grown on Si are promising for photonic integrated circuits. Laser performance is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiency of 87% and output power of 185 mW at 20 °C. Reliability tests show an extrapolated mean-time-to-failure of more than a million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on Si substrates for photonic integrated circuits that are compatible with CMOS foundries.
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