Abstract
We report on the fabrication and performances of the most efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 µm electroluminescence at 300K with a 10% external quantum efficiency, comparable to that of standard light emitting diodes using III-V semiconductors. Er excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light emitting MOS devices have been fabricated using Er-doped SRO (Silicon Rich Oxide) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 1%. In these devices Er pumping occurs by energy transfer from the Si nanostructures to the rare earth ions.
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