Abstract
We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1.10μm and 1.54–1.70μm wavelength region. More than 50mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20°C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1.5–1.6μm to 1.6–1.7μm. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.
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