Abstract
Strongly correlated one-dimensional systems are paradigms for theoretical condensed-matter physics, since various predictions such as spin–charge separation and topological phase transitions can be...
Highlights
Correlated electron systems1,2) exhibit a variety of exotic phenomena such as fractional quantum Hall effects,3) Bose-Einstein condensation (BEC)4,5) of excitons, high critical temperature (Tc) superconductivity,6) Mott transitions,6) magnetism,7) quantum phase transitions,8) and topological phase transitions.2,7) In general, it is quite difficult to solve quan[21] tum many-body problems, because of the infinite degrees of freedom under the quantum 22 mechanical superposition principle.1,2) Classical computers using silicon (Si) complemen[23] tary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs)9) are not sufficient enough to completely solve these problems, and quantum simulators10,11) will be powerful tools for analysing these systems in the future
An n-channel Si MOSFET was used to identify the plateaus in Hall conductance under the application of strong magnetic fields at low temperature.23,29–31) single electron spin20,22) and an elementary charge state32,33) in Si are candi[53] dates for generating qubits.20,34) Motivated by a possible future application in a CMOS circuit for a quantum simulator in the future, we evaluated a scaled Si MOSFET at low temperatures
An electric dipole is the dual of a magnetic spin, since Einstein’s spe[71] cial theory of relativity ensures the equivalence of electricity and magnetism under Lorentz 72 transformation.56) In reality, this duality is broken in many cases due to the absence of mag[73] netic monopoles57) at least in the low energy scale important for condensed-matter physics, 74 where material properties are dominated by electrons
Summary
Correlated electron systems1,2) exhibit a variety of exotic phenomena such as fractional quantum Hall effects,3) Bose-Einstein condensation (BEC)4,5) of excitons, high critical temperature (Tc) superconductivity,6) Mott transitions,6) magnetism,7) quantum phase transitions,8) and topological phase transitions.2,7) In general, it is quite difficult to solve quan[21] tum many-body problems, because of the infinite degrees of freedom under the quantum 22 mechanical superposition principle.1,2) Classical computers using silicon (Si) complemen[23] tary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs)9) are not sufficient enough to completely solve these problems, and quantum simulators10,11) will be powerful tools for analysing these systems in the future. We will describe the outline of our quantum dipole model, which can be essentially mapped to the same universality class as the attractive Hubbard model and the spin XXZ Heisenberg model in many-body problems.1–3,7,8,42,52,58,74–76) To understand the anomalous transport properties, found in our experiments on p230 MOSFETs, we have considered applying various single-particle models, including Anderson 231 localisation,30) floating-body effects,72,73) ballistic transport, and Bloch oscillation77–79) (Ap232 pendix B) None of these models could account for the deviations in slope upon application of the strong electric fields or the temperature dependence, suggesting a phase transition. To understand our experimental data, we considered the above quantum dipole model, which describes the dipole, formed at the extremely thin gate dielectric interface due to the strong vertical electric field (Fig. 1 (b)). These dipoles will produce the effective molecular field (dotted line in Fig. 11 (h)) to increase the carrier velocity
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