Quantum coulomb blockade phenomena in single-electron transistor based on graphene quantum dot

Abstract

Graphene quantum dot (GQD) is classified in a quantum-coulomb blockade regime, where both of coulomb interaction and confined energy play a crucial role that affect electron transport through the transistors made of GQD. In this paper, the constant interaction model is employed to calculate the addition charge energy of GQDs. The dependency of addition charge energy on the number of electrons and the GQD’s diameter is studied. Finally, the stability diagram of SET based on GQD is modeled and plotted.