Abstract
Quantum corrections to the conductivity have been studied in the two types of low-mobility two-dimensional heterostructures: those with doped quantum well, and doped barriers. The consistent analysis shows that for the structures where electrons occupy the states only in the quantum well, all the temperature and magnetic field dependences of the components of resistivity tensor are well described by the theories of the quantum corrections. Contribution of the electron-electron interaction to the conductivity has been reliably determined for the structures with different electron density. A possible reason of large scatter in experimental data relating to the contribution of electron-electron interaction, obtained in previous papers, is analyzed. The role of the carriers occupying the states of the doped layers is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
