Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

Abstract

Solutions of the 2-D Schrodinger equation across the channel using a finite element method have been implemented into a 3-D finite element (FE) ensemble Monte Carlo (MC) device simulation toolbox as quantum corrections. The 2-D FE Schrodinger equation-based quantum corrections are entirely calibration free and can accurately describe quantum confinement effects in arbitrary device cross sections. The 3-D FE quantum corrected MC simulation is based on the tetrahedral decomposition of the simulation domain and the 2-D Schrodinger equation is solved at prescribed transverse planes of the 3-D mesh in the transport direction. We apply the method to study output characteristics of a nonplanar nanoscaled MOSFET, a{10.7}-nm gate length silicon-on-insulator FinFET, investigating 〈100〉 and 〈110〉 channel orientations. The results are then compared with those obtained from 3-D FE MC simulations with quantum corrections via the density gradient method showing very similar I-V characteristics but very different density distributions.