Abstract
This work develops a method to include quantum corrections in Ensemble Monte Carlo (EMC) simulations of ultrathin double gate SOI devices (UTB-DGSOI). The approach improves the Effecttive Conduction Band Edge (ECBE) method, by taking into account the effects of an arbitrary effective mass tensor describing valleys characteristics and confinement directions. This avoids the use of the effective mass as a fitting parameter, and allows the study of DGSOI channels with different surface orientations. This Multi-Valley ECBE (MV-ECBE) method is applied to to the study of UTB-DGSOI devices showing the important contribution of Volume Inversion (VI) and Intersubband Modulation effects on the drain current as the silicon thickness (TSi) decreases.
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