Abstract
The luminescence properties of amorphous silicon (a-Si)-based nanostructures have been studied. The photoluminescence (PL) intensity is enhanced in both a-Si nanoparticles and a-Si quantum wells compared to the case of bulk a-Si. In a-Si nanostructures, the PL intensity depends weakly on the measurement temperature and visible PL is observed at room temperature, while in bulk a-Si the near-infrared PL disappears at temperatures above 150 K. The luminescence mechanism and quantum confinement effects of localized carriers are discussed.
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Schedule a callMore From: Physica Status Solidi A-applications and Materials Science
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