Abstract
ABSTRACTPhotoconductance spectroscopy was used to probe the effects of quantum confinement in nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs). A Metal-Oxide-Semiconductor (MOS)-like structure with the nc-Si SL incorporated in the oxide was fabricated to study charging/discharging processes in Si nanocrystals. The fine structure observed in photoconductance spectra at low temperatures was interpreted in terms of singularities in the carrier density of states, possibly due to energy quantization. In addition, a low-resistance sample exhibited photocurrent oscillations with a frequency of several kHz, which could be a manifestation of sequential resonant carrier tunneling in the nc-Si/a-SiO2 SL.
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