Quantum Confinement in GaAs Microcrystallites Embedded in SiO2 Thin Film

Abstract

Semiconductor GaAs microcrystallites were embedded in SiO2 thin films by magnetron rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction and x-ray photoelectron microscopy. Average size of microcrystallites, depending on the substrate temperature during deposition, is 3-10 nm. Absorption spectra of the films were measured. Blue shift of absorption edge was observed and discussed according to quantum confinement effect.