Abstract
Functionalization of thin-film heterostructures on the basis of their electrical, optical and magnetic properties, requires precise control of the film stresses that develop during the growth process. By using real-time in situ stress measurements, the present study reveals strikingly that the in-plane film stress oscillates with increasing film thickness at the initial stage of epitaxial Al(111) film growth on a Si(111)-√3×√3-Al surface, with a periodicity of 2 times the Fermi wavelength of bulk Al and a stress variation from maximum to minimum as large as 100 MPa. Such macroscopic stress oscillations are shown to be caused by quantum confinement of the free electrons in the ultrathin epitaxial metal film. The amplitude, period, and phase of the observed stress oscillations are consistent with predictions based on the free electron model and continuum elasticity.
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